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DIODES INC.  DMG6602SVT  Dual MOSFET, N and P Channel, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V

DIODES INC. DMG6602SVT
Technical Data Sheet (266.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and maintain superior switching performance, making it ideal for high efficiency power management applications and backlighting.
  • Automotive grade AEC-Q101 qualified
  • UL recognized
  • Drain to source voltage (Vds) of 30V
  • Gate to source voltage (Vgs) of ±20V
  • Continuous drain current of 3.4A
  • Power dissipation (Pd) of 1.27W
  • Operating temperature range -55°C to 150°C
  • Low on state resistance of 38mohm at Vgs of 10V

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
3.4A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.038ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
1.12W
Transistor Case Style:
TSOT-26
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000027

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