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DIODES INC.  FCX658ATA  Bipolar (BJT) Single Transistor, NPN, 400 V, 50 MHz, 1 W, 500 mA, 35 hFE

DIODES INC. FCX658ATA
Technical Data Sheet (75.90KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
400V
Transition Frequency ft:
50MHz
Power Dissipation Pd:
1W
DC Collector Current:
500mA
DC Current Gain hFE:
35hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000105

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