Low

FAIRCHILD SEMICONDUCTOR  FQA19N60  Power MOSFET, N Channel, 18.5 A, 600 V, 380 mohm, 10 V, 5 V

FAIRCHILD SEMICONDUCTOR FQA19N60
Technical Data Sheet (1.72MB) EN See all Technical Docs

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Product Overview

The FQA19N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild's proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
  • Low gate charge
  • 100% Avalanche tested

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
18.5A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.38ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
300W
Transistor Case Style:
TO-3P
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Lighting

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006

Associated Products