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NXP  BST39,115  Bipolar (BJT) Single Transistor, NPN, 350 V, 70 MHz, 1.3 W, 100 mA, 40 hFE

NXP BST39,115
Technical Data Sheet (96.32KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
350V
Transition Frequency ft:
70MHz
Power Dissipation Pd:
1.3W
DC Collector Current:
100mA
DC Current Gain hFE:
40hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001