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STMICROELECTRONICS  STP80NF55-08  MOSFET Transistor, N Channel, 80 A, 55 V, 8 mohm, 10 V, 3 V

STMICROELECTRONICS STP80NF55-08
Technical Data Sheet (357.88KB) EN See all Technical Docs

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Product Overview

The STP80NF55-08 from STMicroelectronics is a through hole, 55V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET designed in unique Single Feature Size strip based process, resulting transistor shows extremely high packing density for low onstate resistance, rugged avalanche characteristics and less critical alignment steps. Applicable at switching applications.
  • Drain to source voltage (Vds) of 55V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) of 80A
  • Power dissipation (Pd) of 300W
  • Low on state resistance of 6.5mohm at Vgs 10V
  • Operating junction temperature range from -55°C to 175°C

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
80A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.008ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
300W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Morocco

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.002685

Associated Products