Low

VISHAY  IRFD120PBF.  MOSFET Transistor, N Channel, 1.3 A, 100 V, 270 mohm, 10 V, 4 V

VISHAY IRFD120PBF.
Technical Data Sheet (1.79MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFD120PBF is a 100V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • 175°C Operating temperature
  • Easy to parallel
  • Simple drive requirement
  • For automatic insertion
  • End stackable

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.3A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.27ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
1.3W
Transistor Case Style:
DIP
No. of Pins:
4Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.015876