Low

VISHAY  IRFIB6N60APBF.  Power MOSFET, N Channel, 5.5 A, 600 V, 750 mohm, 10 V, 4 V

VISHAY IRFIB6N60APBF.
Technical Data Sheet (139.22KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.5A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.75ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
60W
Transistor Case Style:
TO-220FP
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Great Britain

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products