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VISHAY  SI3867DV-T1-E3  MOSFET Transistor, P Channel, -3.9 A, -20 V, 0.041 ohm, -2.5 V, -1.4 V

VISHAY SI3867DV-T1-E3
Technical Data Sheet (201.40KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-3.9A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.041ohm
Rds(on) Test Voltage Vgs:
-2.5V
Threshold Voltage Vgs:
-1.4V
Power Dissipation Pd:
1.1W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0001

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MOSFET Transistor, P Channel, -5.97 A, -20 V, 50 mohm, -4.5 V, -600 mV

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