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SIZ200DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 61 A, 61 A, 4500 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ200DT-T1-GE3
Order Code2990577RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 100+ | RM2.830 |
| 500+ | RM2.520 |
| 1000+ | RM2.080 |
| 5000+ | RM2.080 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM283.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ200DT-T1-GE3
Order Code2990577RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id61A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0045ohm
Continuous Drain Current Id N Channel61A
Continuous Drain Current Id P Channel61A
Drain Source On State Resistance N Channel4500µohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel4500µohm
Gate Source Threshold Voltage Max2.4V
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation Pd33W
Power Dissipation N Channel33W
Power Dissipation P Channel33W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
61A
On Resistance Rds(on)
0.0045ohm
Continuous Drain Current Id P Channel
61A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
4500µohm
Transistor Case Style
PowerPAIR
Power Dissipation Pd
33W
Power Dissipation P Channel
33W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
61A
Drain Source On State Resistance N Channel
4500µohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Power Dissipation N Channel
33W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003