INFINEON Semiconductors - Discretes

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IPM Power Device Voltage Rating (Vces / Vdss) Current Rating (Ic / Id) Isolation Voltage IPM Case Style IPM Series
 
 
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IKCM15L60GDXKMA1
IKCM15L60GDXKMA1 - Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/15A/6 Outputs, SIP-24

2781283

Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/15A/6 Outputs, SIP-24

INFINEON

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IGBT 600V 15A 2kV DIP CIPOS Mini
IDH04G65C6XKSA1
IDH04G65C6XKSA1 - Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 12 A, 6.9 nC, TO-220

2779277

Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 12 A, 6.9 nC, TO-220

INFINEON

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IRFB7530PBF
IRFB7530PBF - Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-220AB, Through Hole

2406514

Power MOSFET, N Channel, 60 V, 195 A, 0.002 ohm, TO-220AB, Through Hole

INFINEON

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BFP420FH6327XTSA1
BFP420FH6327XTSA1 - Bipolar - RF Transistor, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, TSFP

2480666

Bipolar - RF Transistor, NPN, 4.5 V, 25 GHz, 210 mW, 60 mA, TSFP

INFINEON

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IPP60R125C6XKSA1
IPP60R125C6XKSA1 - Power MOSFET, N Channel, 600 V, 30 A, 0.11 ohm, TO-220, Through Hole

2726068

Power MOSFET, N Channel, 600 V, 30 A, 0.11 ohm, TO-220, Through Hole

INFINEON

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BAT1502ELE6327XTMA1
BAT1502ELE6327XTMA1 - RF Schottky Diode, Single, 4 V, 110 mA, 410 mV, 0.35 pF, TSLP-2-19

2787836

RF Schottky Diode, Single, 4 V, 110 mA, 410 mV, 0.35 pF, TSLP-2-19

INFINEON

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FF400R07A01E3S6XKSA2
FF400R07A01E3S6XKSA2 - IGBT Module, Dual, 400 A, 1.65 V, 1.5 kW, 175 °C, Module

3227668

IGBT Module, Dual, 400 A, 1.65 V, 1.5 kW, 175 °C, Module

INFINEON

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BFP843FH6327XTSA1
BFP843FH6327XTSA1 - Bipolar - RF Transistor, NPN, 2.6 V, 125 mW, 55 mA, TSFP

2781218

Bipolar - RF Transistor, NPN, 2.6 V, 125 mW, 55 mA, TSFP

INFINEON

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BB914E6327HTSA1
BB914E6327HTSA1 - Variable Capacitance Diode, 45 pF, 50 mA, 18 V, 125 °C, SOT-23, 3 Pin

2839335

Variable Capacitance Diode, 45 pF, 50 mA, 18 V, 125 °C, SOT-23, 3 Pin

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BAS7002LE6327XTMA1
BAS7002LE6327XTMA1 - Small Signal Schottky Diode, Single, 70 V, 70 mA, 1 V, 100 mA, 125 °C

2839345

Small Signal Schottky Diode, Single, 70 V, 70 mA, 1 V, 100 mA, 125 °C

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SPA11N65C3XKSA1
SPA11N65C3XKSA1 - Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-220F, Through Hole

1471771

Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-220F, Through Hole

INFINEON

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IPU80R1K4P7AKMA1
IPU80R1K4P7AKMA1 - Power MOSFET, N Channel, 800 V, 4 A, 1.2 ohm, TO-251, Through Hole

2781189

Power MOSFET, N Channel, 800 V, 4 A, 1.2 ohm, TO-251, Through Hole

INFINEON

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IDH06G65C6XKSA1
IDH06G65C6XKSA1 - Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 16 A, 9.6 nC, TO-220

2779278

Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 16 A, 9.6 nC, TO-220

INFINEON

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IDW80C65D1XKSA1
IDW80C65D1XKSA1 - Standard Recovery Diode, 650 V, 80 A, Dual Common Cathode, 1.7 V, 77 ns, 320 A

2780778

Standard Recovery Diode, 650 V, 80 A, Dual Common Cathode, 1.7 V, 77 ns, 320 A

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IPAN70R600P7SXKSA1
IPAN70R600P7SXKSA1 - Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, TO-220FP, Through Hole

3227628

Power MOSFET, N Channel, 700 V, 8.5 A, 0.49 ohm, TO-220FP, Through Hole

INFINEON

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FS30R06VE3BOMA1
FS30R06VE3BOMA1 - IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module

2781260

IGBT Module, Six Pack [Full Bridge], 34 A, 1.55 V, 88 W, 150 °C, Module

INFINEON

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IPA50R950CEXKSA2
IPA50R950CEXKSA2 - Power MOSFET, N Channel, 500 V, 6.6 A, 0.86 ohm, TO-220FP, Through Hole

2781064

Power MOSFET, N Channel, 500 V, 6.6 A, 0.86 ohm, TO-220FP, Through Hole

INFINEON

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BSB013NE2LXIXUMA1
BSB013NE2LXIXUMA1 - Power MOSFET, N Channel, 25 V, 163 A, 0.0011 ohm, WDSON, Surface Mount

2781049

Power MOSFET, N Channel, 25 V, 163 A, 0.0011 ohm, WDSON, Surface Mount

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IPD60R650CEAUMA1
IPD60R650CEAUMA1 - Power MOSFET, N Channel, 600 V, 9.9 A, 0.54 ohm, TO-252 (DPAK), Surface Mount

2781172

Power MOSFET, N Channel, 600 V, 9.9 A, 0.54 ohm, TO-252 (DPAK), Surface Mount

INFINEON

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IDM08G120C5XTMA1
IDM08G120C5XTMA1 - Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 27 A, 28 nC, TO-252 (DPAK)

2780806

Silicon Carbide Schottky Diode, thinQ 5G 1200V, Single, 1.2 kV, 27 A, 28 nC, TO-252 (DPAK)

INFINEON

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IDD04SG60CXTMA2
IDD04SG60CXTMA2 - Silicon Carbide Schottky Diode, thinQ Gen III Series, Single, 600 V, 4 A, 4.5 nC, TO-252 (DPAK)

2895616

Silicon Carbide Schottky Diode, thinQ Gen III Series, Single, 600 V, 4 A, 4.5 nC, TO-252 (DPAK)

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IDW30C65D2XKSA1
IDW30C65D2XKSA1 - Fast / Ultrafast Diode, 650 V, 30 A, Dual Common Cathode, 2.2 V, 32 ns, 100 A

2780784

Fast / Ultrafast Diode, 650 V, 30 A, Dual Common Cathode, 2.2 V, 32 ns, 100 A

INFINEON

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IRFP4127PBF
IRFP4127PBF - Power MOSFET, N Channel, 200 V, 75 A, 0.017 ohm, TO-247AC, Through Hole

2781129

Power MOSFET, N Channel, 200 V, 75 A, 0.017 ohm, TO-247AC, Through Hole

INFINEON

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BAT5406E6327HTSA1
BAT5406E6327HTSA1 - Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 800 mV, 600 mA, 150 °C

2787841

Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 800 mV, 600 mA, 150 °C

INFINEON

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BSC0910NDIATMA1
BSC0910NDIATMA1 - Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 0.0035 ohm

2839431

Dual MOSFET, N Channel, 25 V, 25 V, 40 A, 40 A, 0.0035 ohm

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