Stay competitive, reduce costs with Infineon CoolSiC MOSFETs and diodes

Infineon CoolSiC solutions maximize competitive advantage by reducing costs, overcoming design challenges and boosting performance reliability.

With 30 years of experience in silicon carbide (SiC) technology development, Infineon’s portfolio addresses customer needs for smarter, more efficient energy generation, transmission and consumption.

Infineon supplies all leading power technologies: silicon (Si), SiC, gallium nitride (GaN) and GaN-on-Si and is a pioneer in the commercial use of SiC technology. The portfolio includes CoolSiC Schottky diodes, CoolSiC hybrid devices, CoolSiC MOSFET modules and discretes, plus EiceDRIVER™ gate driver ICs for driving SiC devices.

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CoolSiC by application

Clean energy, energy efficiency and electric mobility drive demand for new power semiconductor solutions. SiC could be an answer to some of these challenges by providing more energy from clean resources.

Most of the applications surrounding us today are based on silicon (Si). But those applications call for advances in efficiency, power density and new ways to overcome silicon’s performance limitations. SiC technology has reached the tipping point. Today, designers looking to stay competitive and lower long-term system costs are turning to SiC-based technologies.

Some of the most popular applications include:

Electric vehicle (EV) charging

CoolSiC™ MOSFETs reduce charging time by half at the same charging station and footprint. One 1200 V SiC MOSFET is sufficient to support a DC-link voltage of 800 V.

Doubling the power density allows a component count reduction of a comparable Si solution by 50% thanks to doubled voltage in the switch positions.

Energy storage systems (ESS)

CoolSiC™ MOSFET 650 V and 1200 V are cutting losses by 50% for extra energy.

As the battery bank makes up the major portion of the total system costs for Energy Storage Systems, a change from silicon superjunction MOSFET to CoolSiC MOSFET can lead to approximately 2% extra energy without increasing battery size.

Industrial drives

CoolSiC™ MOSFET powers the next generation of servo drive design.

Up to 80% loss reduction compared to Si IGBT solution is possible thanks to resistive behavior of SiC MOSFET and the load profile of servos is a perfect match.

Switch mode power supply (SMPS) for industry

CoolSiC, CoolMOS and EiceDRIVER for energy-smart SMPS designs combine in industrial applications like telecom datacenter.

Industrial SMPS are driven by the trends of improved energy efficiency, high power density and ever-growing output power. Wide-bandgap materials enable the move to high-performance topologies.

Automotive powertrain

Automotive applications are size limited to provide more cabin comfort and design flexibility.

1200 V CoolSiC MOSFETs implemented in electric drivetrains enable system size reduction of up to 80% thanks to higher power density, lower cooling effort and fewer passive components.

e14 Community CoolSiC™ Tech Spotlight and Webinar

Established in 2009, the element14 Community is unique in the electronics industry and provides a forum for engineers, makers, educators and students to share ideas and become inspired.

The e14 Community is an impartial hub of information and product reviews. Explore the Tech Spotlight and Webinar that have been dedicated to the CoolSiC MOSFET.

Webinar: CoolSiC MOSFET: Coming soon!

This interactive platform allows for panel discussions, multilocation speakers and a live product demonstration of the CoolSiC MOSFET. Watch live or on demand.

Boards for all requirements

EVAL-1ED3122MC12H-SIC

EVAL1ED3122MC12HSICTOBO1

Entry Level Evaluation Kit - for testing functionalities of SiC. Both 650 V and 1200 V SiC MOSFETs are included, need to be soldered to the board dependent on use case.

Multi-purpose board (to measure the performance of the products).

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EVALPSSICDPMAINTOBO1

EVALPSSICDPMAINTOBO1

CoolSiC™ MOSFET 1200 V Evaluation Platform - Mother Board - intended to evaluate the switching behaviour of the MOSFET for a maximum voltage of 800 V and a maximum pulsed current of 130 A.

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EVAL1ED3491MX12MTOBO1

EVAL1ED3491MX12MTOBO1

EVAL1ED3491MX12M evaluation board demonstrates the functionality, adjustment possibilities, and features of the EiceDRIVER™ 1ED-X3 analogue gate driver IC s.

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REFPSSICDP1TOBO1

REFPSSICDP1TOBO1

SiC modules contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V.

Si/SiC hybrid modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar inverters, energy storage systems and uninterruptible power supplies.

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REFPSSICDP2TOBO1

REFPSSICDP2TOBO1

Reference board for CoolSiC™ MOSFET 1200 V – daughter board – in TO -247 3-/4- pin evaluation platform allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative.

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EVALPSE1BF12SICTOBO1

EVALPSE1BF12SICTOBO1

Evaluation Board designed as bidirectional buck-boost converter for double-pulse measurements as well as functional tests.

Application focus: Application focus: Solar, UPS.

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EVALM1IM828ATOBO1
EVALM1IM828ATOBO1

EVALM1IM828ATOBO1 is an evaluation board for CIPOS™ Maxi features 1200V SiC IPM IM828-XCC.

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EVALM5IMZ120RSICTOBO1
EVALM5IMZ120RSICTOBO1

A complete evaluation board including six discrete CoolSiC™ MOSFETs realizing a B6 inverter for motor drive applications.

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REF62WFLY1700VSICTOBO1
REF62WFLY1700VSICTOBO1

A 62.5W auxiliary power supply for three-phase power converter using 1700 V CoolSiC™ MOSFET in a single-ended flyback topology.

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REFDAB11KIZSICSYSTOBO1
REFDAB11KIZSICSYSTOBO1

REF-DAB11KIZSICSYS is a CLLC resonant DC/DC converter board able to provide up to 11kW at 800V output voltage.

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Download SIC design resources

Includes: white papers, application brochures and guides, microlearnings, and product guides

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