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INFINEON IRFB5615PBF

Power MOSFET, N Channel, 150 V, 35 A, 0.032 ohm, TO-220AB, Through Hole

INFINEON IRFB5615PBF
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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRFB5615PBF
Order Code:
1831080
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Also Known As:
SP001575534
Technical Datasheet:
IRFB5615PBF   Datasheet
ECAD / MCAD
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Product Overview

The IRFB5615PBF is a 150V single N-channel Digital Audio HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. It is specially designed for class D audio amplifier applications. Gate charge, body diode reverse recovery and internal gate resistance are optimized to improve audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. It features combine to make this MOSFET a highly efficient, robust and reliable device for class-D audio amplifier applications.
  • Key parameters optimized for class-D audio
  • Amplifier applications
  • Low RDS (ON) for improved efficiency
  • Low QG and QSW for better THD and improved efficiency
  • Low QRR for better THD and lower EMI
  • Can deliver up to 300W per channel into 4R load in half-bridge configuration amplifier
  • 175°C Operating junction temperature for ruggedness

Applications

Audio

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
N Channel

:
150V

:
35A

:
0.032ohm

:
TO-220AB

:
Through Hole

:
10V

:
3V

:
144W

:
3Pins

:
175°C

:
-

:
-

:
-

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Technical Documents (1)

Also Known As

SP001575534

1,853 In stock Need more?

1,853 UK stock available for 3-4 business days delivery

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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