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FDG6320C

Dual MOSFET, Complementary N and P Channel, 25 V, 220 mA, 4 ohm, SC-70, Surface Mount

FDG6320C - Dual MOSFET, Complementary N and P Channel, 25 V, 220 mA, 4 ohm, SC-70, Surface Mount

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Manufacturer Part No:
FDG6320C
Order Code:
1467972
Technical Datasheet:
FDG6320C   Datasheet
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Product Overview

The FDG6320C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
  • Very small package outline
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
  • Gate-source Zener for ESD ruggedness

Applications

Industrial, Power Management

Product Information

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:
Complementary N and P Channel

:
25V

:
220mA

:
4ohm

:
SC-70

:
Surface Mount

:
4.5V

:
850mV

:
300mW

:
6Pins

:
150°C

:
-

:
-

:
MSL 1 - Unlimited
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Technical Docs (2)

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