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ONSEMI HGTD1N120BNS9A

IGBT, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 Pins

ONSEMI HGTD1N120BNS9A
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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
HGTD1N120BNS9A
Order Code:
2453921RL
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Technical Datasheet:
HGTD1N120BNS9A   Datasheet
ECAD / MCAD
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Product Range Selector (Multicomp Pro RJ45 Adapter)

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Product Overview

The HGTD1N120BNS9A is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
  • Short-circuit rating
  • Avalanche rated
  • 2.5V @ IC = 1A Low saturation voltage
  • 258ns Fall time @ TJ = 150°C
  • 298W Total power dissipation @ TC = 25°C

Applications

Power Management, Motor Drive & Control

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
5.3A

:
2.5V

:
60W

:
1.2kV

:
TO-252AA

:
3Pins

:
150°C

:
Surface Mount

:
Multicomp Pro RJ45 Adapter

:
MSL 1 - Unlimited

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Technical Documents (3)

Packaging type Re-reel
"
 
Additional packaging options available
Cut Tape :2453921 Check stock

Available for back order

More stock available to supplier lead times which is approximately 10/21/24

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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RM4.67

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100 (Cut Tape 2453921) x 4.67 = RM467.00
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100 (Re-reel 2453921RL) x 4.67 = RM467.00
Total Price: RM467.00
For the quantity ordered, some or all of your order will be placed on backorder. See 'Check stock and lead times' for details.
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2453921
"
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