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STMICROELECTRONICS STB23NM60ND

Power MOSFET, N Channel, 600 V, 10 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount

STMICROELECTRONICS STB23NM60ND
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Manufacturer Part No:
STB23NM60ND
Order Code:
1751989
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Technical Datasheet:
STB23NM60ND   Datasheet
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Product Overview

The STB23NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
  • The worldwide best RDS (ON) area amongst the fast recovery diode device
  • 100% Avalanche tested
  • Low gate input resistance
  • High dV/dt and avalanche capabilities

Applications

Industrial, Power Management

Product Information

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:
N Channel

:
600V

:
10A

:
0.15ohm

:
TO-263 (D2PAK)

:
Surface Mount

:
10V

:
4V

:
150W

:
3Pins

:
150°C

:
Multicomp Pro RJ45 Adapter

:
-

:
MSL 1 - Unlimited

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Technical Documents (2)

Packaging type Cut Tape
 
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