120A Silicon Carbide (SiC) MOSFETs & Modules

Find a huge range of 120A Silicon Carbide (SiC) MOSFETs & Modules at element14 Malaysia. We stock a wide range of Silicon Carbide (SiC) MOSFETs & Modules, such as 30A, 17A, 40A & 60A Silicon Carbide (SiC) MOSFETs & Modules from the worlds top manufacturers including: Onsemi, Diotec & Rohm

Filter(s) Applied

Continuous Drain Current Id

120A

1 Filter(s) Selected

			Price For		Quantity

UF3SC120009K4S	4014251 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 8600 µohm TO-247	Each	1+ RM354.360 5+ RM347.280 10+ RM340.190 50+ RM333.100	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	8600µohm	TO-247	4Pins	12V	4.7V	789W	175°C	-
UJ4SC075006K4S	4221971 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 5.9 mohm TO-247	Each	1+ RM287.570 5+ RM281.820 10+ RM276.070 50+ RM270.320	Min: 1 / Mult: 1	Single	N Channel	120A	750V	5.9mohm	TO-247	4Pins	12V	6V	714W	175°C	-
UF3SC065007K4S	4014249 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 650 V 6700 µohm TO-247	Each	1+ RM347.410 5+ RM340.470 10+ RM333.520 50+ RM326.570	Min: 1 / Mult: 1	Single	N Channel	120A	650V	6700µohm	TO-247	4Pins	12V	4.7V	789W	175°C	-
DIW120SIC022-AQ	4552614 Data Sheet RoHS	DIOTEC Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+ RM985.020 5+ RM877.560 10+ RM770.100 50+ RM754.700	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	340W	175°C	-
DIF120SIC022	4552616 Data Sheet RoHS	DIOTEC Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+ RM347.080 5+ RM309.210 10+ RM271.340 50+ RM217.050 100+ RM162.750	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-
DIF120SIC022-AQ	4552613 Data Sheet RoHS	DIOTEC Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+ RM985.020 5+ RM877.560 10+ RM770.100 50+ RM754.700	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C	-
BSM120D12P2C005	2345472 Data Sheet RoHS	ROHM Silicon Carbide Bipolar (BJT) Single Transistor N Channel 120 A 1.2 kV 2.7 V	Each	1+ RM2,018.360	Min: 1 / Mult: 1	Half Bridge	N Channel	120A	1.2kV	-	Module	10Pins	-	2.7V	780W	150°C	-
UG3SC120009K4S	4750191 Data Sheet	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.011 ohm TO-247	Each	1+ RM289.260 5+ RM274.630 10+ RM259.890 50+ RM252.360	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.011ohm	TO-247	4Pins	12V	6V	789W	175°C	EliteSiC Series
UF3N120007K4S	4750183 Data Sheet	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 7100 µohm TO-247	Each	1+ RM265.380 5+ RM251.960 10+ RM238.440 50+ RM231.530	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	7100µohm	TO-247	4Pins	2V	-4.7V	789W	175°C	EliteSiC Series
UG4SC075006K4S	4750193 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 7500 µohm TO-247	Each	1+ RM221.820 5+ RM210.600 10+ RM199.300 50+ RM193.520 100+ RM189.650	Min: 1 / Mult: 1	Single	N Channel	120A	750V	7500µohm	TO-247	4Pins	12V	6V	714W	175°C	EliteSiC Series
SCT4013DLLTRDC	4756134 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Single N Channel 120 A 750 V 0.0169 ohm TOLL	Each (Supplied on Cut Tape) Cut Tape	1+ RM144.320 5+ RM143.280 10+ RM142.230 50+ RM138.360 100+ RM134.480	Min: 1 / Mult: 1	Single	N Channel	120A	750V	0.0169ohm	TOLL	8Pins	18V	4.8V	405W	175°C	-
UJ4N075005K4S	4750207 Data Sheet	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 4800 µohm TO-247	Each	1+ RM201.810 5+ RM191.610 10+ RM181.330 50+ RM176.070 100+ RM172.550	Min: 1 / Mult: 1	Single	N Channel	120A	750V	4800µohm	TO-247	4Pins	2V	-3.7V	714W	175°C	EliteSiC Series
DIW120SIC022	4752370 Data Sheet RoHS	DIOTEC Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247	Each	1+ RM271.140 5+ RM244.180 10+ RM216.980 50+ RM185.640 100+ RM151.060 More Pricing...	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	580W	175°C	-