Print Page
DMP10H4D2S-7
Power MOSFET, P Channel, 100 V, 270 mA, 4.2 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
8,962 In Stock
Need more?
8962 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 5+ | RM1.260 |
| 50+ | RM1.020 |
| 100+ | RM0.765 |
| 500+ | RM0.452 |
| 1500+ | RM0.443 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
RM6.30
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP10H4D2S-7
Order Code3127354
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id270mA
Drain Source On State Resistance4.2ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation380mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMP10H4D2S-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low gate threshold voltage, low input capacitance, fast switching speed
- Small surface-mount package, ESD protected up to 2KV (HBM)
- Drain-source voltage is -100V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is -0.27A at TA = +25°C, VGS = -10V, steady state
- Pulsed drain current (10µs pulse, duty cycle = 1%) is -1A at TA = +25°C
- Total power dissipation is 0.38W at TA = +25°C
- Maximum body diode forward current is -4A at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
270mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
380mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
4.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00185