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IPD135N08N3GATMA1
Power MOSFET, N Channel, 80 V, 45 A, 0.0114 ohm, TO-252 (DPAK), Surface Mount
1,376 In Stock
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| Quantity | Price |
|---|---|
| 1+ | RM8.510 |
| 10+ | RM5.420 |
| 100+ | RM3.620 |
| 500+ | RM2.850 |
| 1000+ | RM2.260 |
| 5000+ | RM2.190 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
RM8.51
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD135N08N3GATMA1
Order Code2781079
Product RangeOptiMOS 3
Also Known AsIPD135N08N3 G, SP001127822
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id45A
Drain Source On State Resistance0.0114ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation79W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
45A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
79W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0114ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426