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IPP019N08NF2SAKMA1
Power MOSFET, N Channel, 80 V, 191 A, 1700 µohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPP019N08NF2SAKMA1
Order Code3680223
Product RangeStrongIRFET 2
Also Known AsIPP019N08NF2S, SP005548842
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | RM12.320 |
| 10+ | RM6.830 |
| 100+ | RM6.740 |
| 500+ | RM6.470 |
Price for:Each
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Multiple: 1
RM12.32
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP019N08NF2SAKMA1
Order Code3680223
Product RangeStrongIRFET 2
Also Known AsIPP019N08NF2S, SP005548842
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id191A
Drain Source On State Resistance1700µohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET 2
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
191A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
1700µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
StrongIRFET 2
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002