IR2301SPBF
Dual Driver IC, High Side And Low Side, 5V-20V Supply, 350mA Out, 200ns Delay, SOIC-8
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| Quantity | Price |
|---|---|
| 1+ | RM8.330 |
| 10+ | RM7.950 |
| 50+ | RM7.570 |
| 100+ | RM7.180 |
| 250+ | RM6.800 |
| 500+ | RM6.410 |
| 1000+ | RM6.030 |
| 2500+ | RM5.640 |
Product Information
Product Overview
The IR2301SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation
- Tolerant to negative transient voltage (dV/dt immune)
- Under-voltage lockout for both channels
- Logic and power ground ±5V offset
- Lower di/dt gate driver for better noise immunity
- Outputs in phase with inputs
Applications
Power Management
Technical Specifications
2Channels
High Side and Low Side
8Pins
Surface Mount
200mA
5V
-40°C
220ns
-
MSL 2 - 1 year
-
IGBT, MOSFET
SOIC
Non-Inverting
350mA
20V
150°C
200ns
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate