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MRF1513NT1
RF FET Transistor, 40 V, 2 A, 31.25 W, 450 MHz, 520 MHz, PLD-1.5
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Overview
The MRF1513NT1 is a N-channel RF Power FET designed for broadband applications with frequencies to 520MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5V portable and 12.5V mobile FM equipment.
- Excellent thermal stability
- Characterized with series equivalent large-signal impedance parameters
- 3W Output power
- 15dB Power gain
- 65% Efficiency
Applications
Industrial, Commercial, Power Management
Technical Specifications
Drain Source Voltage Vds
40V
Power Dissipation
31.25W
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
Continuous Drain Current Id
2A
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000352