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Quantity | Price |
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500+ | RM0.313 |
1000+ | RM0.297 |
2500+ | RM0.282 |
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Multiple: 5
RM156.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS123LT1G
Order Code9558640RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id170mA
Drain Source On State Resistance6ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10VDC
Gate Source Threshold Voltage Max2.6V
Power Dissipation225mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS123LT1G is a N-channel Power MOSFET with drain source voltage at 100VDC and drain current at 170mA.
- AEC-Q101 Qualified
- PPAP capable
Applications
Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
170mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10VDC
Power Dissipation
225mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000389