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Quantity | Price |
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5+ | RM1.900 |
10+ | RM1.270 |
100+ | RM0.885 |
500+ | RM0.844 |
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Multiple: 5
RM9.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC658AP
Order Code1495228
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4A
Drain Source On State Resistance0.044ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.044ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
6Pins
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for FDC658AP
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00435