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| Quantity | Price |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBD301LT1G
Order Code2463431
Product RangeMMBD3
Technical Datasheet
Diode ConfigurationSingle
Reverse Voltage30V
Forward Current200mA
Forward Voltage450mV
Diode Capacitance0.9pF
Diode Case StyleSOT-23
No. of Pins3 Pin
Diode MountingSurface Mount
Operating Temperature Max125°C
Product RangeMMBD3
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBD301LT1G is a Silicon Hot-carrier Detector and Switching Diode designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications.
- 15ps Extremely low minority carrier lifetime
- 1.5pF at VR=15V Maximum very low capacitance
- 13nA DC Low reverse leakage IR
- -55 to 125°C Operating junction temperature range
Applications
RF Communications, Sensing & Instrumentation, Industrial
Technical Specifications
Diode Configuration
Single
Forward Current
200mA
Diode Capacitance
0.9pF
No. of Pins
3 Pin
Operating Temperature Max
125°C
SVHC
No SVHC (27-Jun-2024)
Reverse Voltage
30V
Forward Voltage
450mV
Diode Case Style
SOT-23
Diode Mounting
Surface Mount
Product Range
MMBD3
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033