Print Page
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBTH10LT1G
Order Code1459112RL
Product RangeMMBTxxxx
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max25V
Transition Frequency650MHz
Power Dissipation225mW
Continuous Collector Current4mA
Transistor Case StyleSOT-23
No. of Pins3Pins
DC Current Gain hFE Min60hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBTH10LT1G is an NPN Silicon VHF/UHF Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified.
- Halogen-free
Applications
RF Communications, Industrial
Technical Specifications
Transistor Polarity
NPN
Transition Frequency
650MHz
Continuous Collector Current
4mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
MMBTxxxx
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
25V
Power Dissipation
225mW
Transistor Case Style
SOT-23
DC Current Gain hFE Min
60hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MMBTH10LT1G
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000309