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MMUN2212LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 22 kohm, 22 kohm
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ManufacturerONSEMI
Manufacturer Part NoMMUN2212LT1G
Order Code
Re-Reel9556656RL
Cut Tape9556656
Your Part Number
64,000 In Stock
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64000 Delivery in 3-4 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | RM1.290 | RM6.45 |
| Total Price | RM6.45 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | RM1.290 |
| 10+ | RM0.526 |
| 100+ | RM0.282 |
| 500+ | RM0.194 |
| 1000+ | RM0.146 |
| 5000+ | RM0.144 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMUN2212LT1G
Order Code
Re-Reel9556656RL
Cut Tape9556656
Technical Datasheet
Digital Transistor PolaritySingle NPN
Transistor PolaritySingle NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current Ic100mA
Continuous Collector Current100mA
Base Input Resistor R122kohm
Base Emitter Resistor R222kohm
Resistor Ratio, R1 / R21(Ratio)
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation400mW
Operating Temperature Max150°C
DC Current Gain hFE Min60hFE
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The MMUN2212LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
- Simplifies circuit design
- Reduces board space
- Reduces component count
Applications
Industrial, Power Management
Technical Specifications
Digital Transistor Polarity
Single NPN
Collector Emitter Voltage Max NPN
50V
Collector Emitter Voltage Max PNP
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
22kohm
Transistor Case Style
SOT-23
No. of Pins
3 Pin
Power Dissipation
400mW
DC Current Gain hFE Min
60hFE
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
Single NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
22kohm
Resistor Ratio, R1 / R2
1(Ratio)
RF Transistor Case
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for MMUN2212LT1G
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005