Print Page
NTZD3155CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm
Image is for illustrative purposes only. Please refer to product description.
30,335 In Stock
Need more?
30335 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | RM0.652 |
| 500+ | RM0.485 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM65.20
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTZD3155CT1G
Order Code2101817RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id540mA
Continuous Drain Current Id N Channel540mA
On Resistance Rds(on)0.4ohm
Continuous Drain Current Id P Channel540mA
Drain Source On State Resistance N Channel0.4ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.4ohm
Transistor Case StyleSOT-563
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd250mW
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTZD3155CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion circuits, load/power switching with level shift, single or dual cell Li-Ion battery operated systems and high speed circuit applications.
- Leading Trench technology for low RDS (ON) performance
- High efficiency system performance
- Low threshold voltage
- ESD protected gate
- Small footprint
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
540mA
Continuous Drain Current Id P Channel
540mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.4ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
250mW
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
540mA
On Resistance Rds(on)
0.4ohm
Drain Source On State Resistance N Channel
0.4ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for NTZD3155CT1G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726