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NTZD3155CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm
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| Quantity | Price |
|---|---|
| 100+ | RM0.652 |
| 500+ | RM0.485 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM65.20
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTZD3155CT1G
Order Code2101817RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id540mA
Continuous Drain Current Id N Channel540mA
On Resistance Rds(on)0.4ohm
Continuous Drain Current Id P Channel540mA
Drain Source On State Resistance N Channel0.4ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.4ohm
Transistor Case StyleSOT-563
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd250mW
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTZD3155CT1G is a N/P-channel complementary Small Signal MOSFET designed for cell phones, MP3s, digital cameras and PDAs. It is suitable for DC-to-DC conversion circuits, load/power switching with level shift, single or dual cell Li-Ion battery operated systems and high speed circuit applications.
- Leading Trench technology for low RDS (ON) performance
- High efficiency system performance
- Low threshold voltage
- ESD protected gate
- Small footprint
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
540mA
Continuous Drain Current Id P Channel
540mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.4ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
250mW
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
540mA
On Resistance Rds(on)
0.4ohm
Drain Source On State Resistance N Channel
0.4ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726