Print Page
Image is for illustrative purposes only. Please refer to product description.
48,004 In Stock
30,000 more incoming. You can reserve stock now
7337 Delivery in 1-2 Business Days(SG stock)
40667 Delivery in 3-4 Business Days(UK stock)
Quantity | Price |
---|---|
5+ | RM1.250 |
10+ | RM0.568 |
100+ | RM0.332 |
500+ | RM0.326 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
RM6.25
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV301N
Order Code9845011
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id220mA
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.06V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance, this one N channel FET can replace several different digital transistors with different bias resistor values. FDV301N is suitable for low voltage and power management applications.
- Drain to source voltage (Vds) of 25V
- Gate to source voltage of 8V
- Continuous drain current (Id) of 220mA
- Power dissipation (Pd) of 350mW
- Low on state resistance of 3.1ohm at Vgs 4.5V
- Operating temperature range -55°C to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
220mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.06V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Alternatives for FDV301N
2 Products Found
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033