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STB18NM80
Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STB18NM80Copy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | 2098126 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | RM26.330 |
| 10+ | RM14.400 |
| 100+ | RM14.120 |
| 500+ | RM13.830 |
| 1000+ | RM13.540 |
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Product Information
| Manufacturer | STMICROELECTRONICS |
|---|---|
| Manufacturer Part No | STB18NM80Copy |
| Manufacturer Standard Lead Time | 26 weeks |
| Order Code | 2098126 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 800V |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.25ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 190W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The STB18NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
- 100% Avalanche tested
- Low gate input resistance
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 17A |
| Transistor Case Style | TO-263 (D2PAK) |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 190W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 800V |
|---|---|
| Drain Source On State Resistance | 0.25ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Alternatives for STB18NM80
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Associated Products
3 Products Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .001724 |