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Quantity | Price |
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1+ | RM6.820 |
10+ | RM4.140 |
100+ | RM3.900 |
500+ | RM3.250 |
1000+ | RM2.930 |
5000+ | RM2.880 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF530PBF
Order Code8648280
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id14A
Drain Source On State Resistance0.16ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation88W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
The IRF530PBF is an N-channel Power MOSFET provides the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirement
Applications
Industrial, Commercial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
14A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
88W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.16ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002