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Quantity | Price |
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5+ | RM1.000 |
50+ | RM0.780 |
100+ | RM0.555 |
500+ | RM0.458 |
1500+ | RM0.449 |
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Multiple: 5
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1012CR-T1-GE3
Order Code2056674
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id630mA
Drain Source On State Resistance0.33ohm
Transistor Case StyleSC-75A
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation240mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI1012CR-T1-GE3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
- 1.2V Rated voltage
- 100% Rg tested
- 1000V Gate-source ESD protected
- Halogen-free
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
630mA
Transistor Case Style
SC-75A
Rds(on) Test Voltage
4.5V
Power Dissipation
240mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.33ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000363