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| Quantity | Price |
|---|---|
| 5+ | RM2.440 |
| 50+ | RM2.120 |
| 100+ | RM1.790 |
| 500+ | RM1.200 |
| 1500+ | RM1.180 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
RM12.20
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-GE3
Order Code1838997
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.156ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.09W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature.
- 100% Rg Tested
- 100% UIS Tested
- ±20V Gate-source voltage
Applications
Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.09W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.156ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00004