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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG20N50C-E3
Order Code1779257
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id20A
Drain Source On State Resistance0.27ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation292W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (21-Jan-2025)
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Product Overview
The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability.
- Halogen-free according to IEC 61249-2-21 definition
- Low figure of merit Ron X Qg
- 100% Avalanche rated
- dV/dt Ruggedness
- Improved Trr/Qrr
- Improved gate charge
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
292W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.27ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542