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SQJB60EP-T1_GE3
Dual MOSFET, N Channel, 60 V, 60 V, 30 A, 30 A, 0.01 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJB60EP-T1_GE3
Order Code2663702RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | RM4.020 |
| 500+ | RM2.940 |
| 1500+ | RM2.890 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM402.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJB60EP-T1_GE3
Order Code2663702RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id30A
On Resistance Rds(on)0.01ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.01ohm
Drain Source On State Resistance P Channel0.01ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StylePowerPAK SO
Power Dissipation Pd48W
No. of Pins6Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.01ohm
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
0.01ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
No. of Pins
6Pins
Power Dissipation P Channel
48W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
30A
Continuous Drain Current Id N Channel
30A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.01ohm
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
48W
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000123