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Quantity | Price |
---|---|
100+ | RM7.590 |
500+ | RM6.140 |
1000+ | RM5.700 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM759.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD19N20-90-E3
Order Code1470144RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id19A
Drain Source On State Resistance0.09ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Product Overview
The SUD19N20-90-E3 is a 200VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.
- 100% Rg tested
- PWM optimized
- 175°C Junction temperature
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.09ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000488