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FQS4903TF
Dual MOSFET, N Channel, 500 V, 370 mA, 6.2 ohm
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQS4903TF
Order Code9844791RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel500V
Drain Source Voltage Vds500V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id370mA
Continuous Drain Current Id N Channel370mA
On Resistance Rds(on)6.2ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel6.2ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max4V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The FQS4903TF is a N-channel QFET® MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge
- Low Crss (4.5pF)
- 100% Avalanche tested
- ±25V Gate to source voltage
- 0.37A Continuous drain current
- 0.234A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
500V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
370mA
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
6.2ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (10-Jun-2022)
Channel Type
N Channel
Drain Source Voltage Vds
500V
Continuous Drain Current Id
370mA
On Resistance Rds(on)
6.2ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005