Print Page
IGLR70R200D2SXUMA1
Gallium Nitride (GaN) Transistor, 700 V, 9.3 A, 0.24 ohm, 1.26 nC, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGLR70R200D2SXUMA1
Order Code4694674
Product RangeCoolGaN G5 Series
Also Known AsIGLR70R200D2S, SP006123208
Technical Datasheet
215 In Stock
5,000 more incoming. You can reserve stock now
215 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | RM11.040 |
| 10+ | RM7.080 |
| 100+ | RM4.780 |
| 500+ | RM4.020 |
| 1000+ | RM3.760 |
| 5000+ | RM3.690 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
RM11.04
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIGLR70R200D2SXUMA1
Order Code4694674
Product RangeCoolGaN G5 Series
Also Known AsIGLR70R200D2S, SP006123208
Technical Datasheet
Drain Source Voltage Vds700V
Continuous Drain Current Id9.3A
Drain Source On State Resistance0.24ohm
Typical Gate Charge1.26nC
Transistor Case StyleTSON
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeCoolGaN G5 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
IGLR70R200D2SXUMA1 is a CoolGaN™ G5 highly efficient gallium nitride (GaN) transistor designed for power conversion at 700V. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using 200mm (8-inch) wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. It is ideal for consumer applications like chargers, adapters, TV power, and home appliances.
- Qualified according to JEDEC standard, 2kV HBM ESD standards
- Enhancement mode transistor, ultra‑fast switching, no reverse‑recovery charge
- Capable of reverse conduction, low gate and output charge, superior commutation ruggedness
- Normally OFF transistor technology ensures safe operation
- Enables rapid and precise power delivery control
- Improves system efficiency and reliability
- Ensures robust performance under challenging conditions
- Drain‑source on‑state resistance is 0.2ohm typ at IG =7.1mA; ID =2.1A; Tj =25°C
- PG‑TSON‑8 package
- Operating junction temperature range from ‑40 to 150°C
Technical Specifications
Drain Source Voltage Vds
700V
Drain Source On State Resistance
0.24ohm
Transistor Case Style
TSON
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
9.3A
Typical Gate Charge
1.26nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN G5 Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001