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BSS138DW-7-F
Dual MOSFET, N Channel, 50 V, 200 mA, 3.5 ohm
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| Quantity | Price |
|---|---|
| 100+ | RM0.800 |
| 500+ | RM0.720 |
| 1500+ | RM0.705 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
RM80.00
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS138DW-7-F
Order Code1713832RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds50V
Drain Source Voltage Vds N Channel50V
Continuous Drain Current Id200mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)3.5ohm
Continuous Drain Current Id N Channel200mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel3.5ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.2V
No. of Pins6Pins
Power Dissipation Pd200mW
Power Dissipation N Channel200mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS138DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for load switch applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching performance
- Halogen-free
- UL94V-0 Flammability rating
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
50V
Continuous Drain Current Id
200mA
On Resistance Rds(on)
3.5ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
3.5ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.2V
Power Dissipation Pd
200mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
50V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
200mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Alternatives for BSS138DW-7-F
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006