Print Page
BSS8402DW-7-F
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 ohm
Image is for illustrative purposes only. Please refer to product description.
7,016 In Stock
Need more?
7016 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | RM1.180 |
| 500+ | RM0.825 |
| 1500+ | RM0.809 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
RM118.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS8402DW-7-F
Order Code1713834RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id115mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)13.5ohm
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel115mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel13.5ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel13.5ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2.5V
No. of Pins6Pins
Power Dissipation Pd200mW
Power Dissipation N Channel200mW
Power Dissipation P Channel200mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS8402DW-7-F is a complementary pair Enhancement Mode MOSFET with matte tin finish annealed over Alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low on resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Level-1 per J-STD-020 moisture sensitivity
- Green product
- AEC-Q101 Qualified
Applications
Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
115mA
On Resistance Rds(on)
13.5ohm
Continuous Drain Current Id P Channel
115mA
Drain Source On State Resistance N Channel
13.5ohm
Drain Source On State Resistance P Channel
13.5ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
200mW
Power Dissipation P Channel
200mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
115mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for BSS8402DW-7-F
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006