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DI7A6N10SQ
Power MOSFET, N Channel, 100 V, 7.6 A, 0.02 ohm, SOIC, Surface Mount
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| Quantity | Price |
|---|---|
| 100+ | RM2.080 |
| 500+ | RM1.630 |
| 1000+ | RM1.510 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM208.00
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Product Information
ManufacturerDIOTEC
Manufacturer Part NoDI7A6N10SQ
Order Code4555496RL
Technical Datasheet
Drain Source Voltage Vds100V
Continuous Drain Current Id7.6A
Drain Source On State Resistance0.02ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Technical Specifications
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.02ohm
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Continuous Drain Current Id
7.6A
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000115