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AUIRF7343QTR
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
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ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTR
Order Code2803372RL
Product RangeHEXFET Series
Also Known AsAUIRF7343QTR, SP001517450
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | RM6.360 |
| 500+ | RM5.760 |
| 1000+ | RM5.450 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM636.00
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Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTR
Order Code2803372RL
Product RangeHEXFET Series
Also Known AsAUIRF7343QTR, SP001517450
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id4.7A
On Resistance Rds(on)0.043ohm
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id P Channel4.7A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.043ohm
Drain Source On State Resistance P Channel0.043ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOIC
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Product Overview
- Automotive HEXFET® power MOSFET
- Automotive qualified
- Advanced planar technology
- Ultra-low on-resistance
- Logic level gate drive
- Dual N and P channel MOSFET
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
55V
Drain Source Voltage Vds P Channel
55V
On Resistance Rds(on)
0.043ohm
Continuous Drain Current Id P Channel
4.7A
Drain Source On State Resistance N Channel
0.043ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
AEC-Q101
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
55V
Continuous Drain Current Id
4.7A
Continuous Drain Current Id N Channel
4.7A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.043ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000227