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IGT65R055D2XTMA1
Gallium Nitride (GaN) Transistor, 650 V, 31 A, 0.066 ohm, 4.7 nC, HSOF, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
1,495 In Stock
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| Quantity | Price |
|---|---|
| 10+ | RM21.900 |
| 100+ | RM17.490 |
| 500+ | RM16.240 |
| 1000+ | RM15.450 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
RM219.00
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Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.066ohm
No. of Pins
8Pins
Continuous Drain Current Id
31A
Typical Gate Charge
4.7nC
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001