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IMBG120R030M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.041 ohm, TO-263 (D2PAK)
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ManufacturerINFINEON
Manufacturer Part NoIMBG120R030M1HXTMA1
Order Code3582461RL
Product RangeCoolSiC Series
Also Known AsIMBG120R030M1H, SP004463784
Technical Datasheet
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| Quantity | Price |
|---|---|
| 10+ | RM52.180 |
| 50+ | RM47.410 |
| 100+ | RM42.640 |
| 250+ | RM42.630 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG120R030M1HXTMA1
Order Code3582461RL
Product RangeCoolSiC Series
Also Known AsIMBG120R030M1H, SP004463784
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id56A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.041ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.7V
Power Dissipation300W
Operating Temperature Max175°C
Product RangeCoolSiC Series
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
IMBG120R030M1HXTMA1 is a CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology. Typical application includes drives, infrastructure – charger, energy generation - solar string inverter and solar optimizer and industrial power supplies - industrial UPS.
- DC drain current is 56A, drain-source on-state resistance is 30mohm(VGS = 18V, ID = 25A, Tvj = 25°C)
- Very low switching losses
- Short circuit withstand time 3µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- Package creepage and clearance distance greater than 6.1mm
- Sense pin for optimized switching performance
- Available in 7 pin TO-263 package
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
56A
Drain Source On State Resistance
0.041ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.7V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
300W
Product Range
CoolSiC Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001959