Print Page
IPB020NE7N3GATMA1
Power MOSFET, N Channel, 75 V, 120 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB020NE7N3GATMA1
Order Code2443378
Product RangeOptiMOS 3 Series
Also Known AsIPB020NE7N3 G , SP000676950
Technical Datasheet
129 In Stock
Need more?
129 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | RM25.380 |
| 10+ | RM17.890 |
| 100+ | RM13.450 |
| 500+ | RM12.050 |
| 1000+ | RM11.990 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
RM25.38
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB020NE7N3GATMA1
Order Code2443378
Product RangeOptiMOS 3 Series
Also Known AsIPB020NE7N3 G , SP000676950
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id120A
Drain Source On State Resistance0.002ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3 Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPB020NE7N3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
- Best switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Ideal for high frequency switching and DC-to-DC converters
- Normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Audio, Communications & Networking, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.8V
No. of Pins
3Pins
Product Range
OptiMOS 3 Series
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for IPB020NE7N3GATMA1
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181