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IPD110N12N3GATMA1
Power MOSFET, N Channel, 120 V, 75 A, 0.0092 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD110N12N3GATMA1
Order Code2212834
Also Known AsIPD110N12N3 G, SP001127808
Technical Datasheet
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| Quantity | Price |
|---|---|
| 5+ | RM7.400 |
| 50+ | RM6.650 |
| 100+ | RM5.900 |
| 500+ | RM4.930 |
| 1000+ | RM4.350 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
RM37.00
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD110N12N3GATMA1
Order Code2212834
Also Known AsIPD110N12N3 G, SP001127808
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id75A
Drain Source On State Resistance0.0092ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPD110N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Halogen-free, Green device
- Qualified according to JEDEC for target application
- MSL1 rated 2
Applications
Power Management, Motor Drive & Control, Audio, Communications & Networking, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
0.0092ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 3 - 168 hours
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003