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IPP048N12N3GXKSA1
Power MOSFET, N Channel, 120 V, 100 A, 0.0041 ohm, TO-220, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPP048N12N3GXKSA1
Order Code2480848
Also Known AsIPP048N12N3 G, SP000652734
Technical Datasheet
65 In Stock
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| Quantity | Price |
|---|---|
| 1+ | RM18.810 |
| 10+ | RM10.590 |
| 100+ | RM9.680 |
| 500+ | RM9.670 |
Price for:Each
Minimum: 1
Multiple: 1
RM18.81
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP048N12N3GXKSA1
Order Code2480848
Also Known AsIPP048N12N3 G, SP000652734
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds120V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0041ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
120V
Drain Source On State Resistance
0.0041ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002008