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IPW60R070CFD7XKSA1
Power MOSFET, N Channel, 600 V, 31 A, 0.057 ohm, TO-247, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIPW60R070CFD7XKSA1
Order Code2807983
Product RangeCoolMOS CFD7
Also Known AsIPW60R070CFD7, SP001617990
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | RM29.050 |
| 10+ | RM14.670 |
| 100+ | RM14.660 |
Price for:Each
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Multiple: 1
RM29.05
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPW60R070CFD7XKSA1
Order Code2807983
Product RangeCoolMOS CFD7
Also Known AsIPW60R070CFD7, SP001617990
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id31A
Drain Source On State Resistance0.057ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation156W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS CFD7
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
600V CoolMOS™ CFD7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for soft switching topologies, optimized for phase-shift full-bridge (ZVS), LLC applications-server, telecom, EV charging.
- Ultra-fast body diode
- Low gate charge
- Best-in-class reverse recovery charge (Qrr)
- Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
- Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
- Excellent hard commutation ruggedness
- Highest reliability for resonant topologies
- Highest efficiency with outstanding ease-of-use/performance trade-off
- Enabling increased power density solutions
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
31A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
CoolMOS CFD7
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001