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IRF6641TR1PBF
Power MOSFET, N Channel, 200 V, 4.6 A, 0.0599 ohm, DirectFET MZ, Surface Mount
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6641TR1PBF
Order Code1388588
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id4.6A
Drain Source On State Resistance0.0599ohm
Transistor Case StyleDirectFET MZ
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.8W
No. of Pins5Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.6A
Transistor Case Style
DirectFET MZ
Rds(on) Test Voltage
10V
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.0599ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000247