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IRF7503PBF
Dual MOSFET, N Channel, 30 V, 2.4 A, 0.135 ohm
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Overview
The IRF7503PBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The low profile (<lt/>1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
- Generation V technology
- Ultra low ON-resistance
- Low profile
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id P Channel
-
Power Dissipation P Channel
-
Qualification
-
Drain Source Voltage Vds P Channel
-
Transistor Case Style
µSOIC
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000082