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IRGB30B60KPBF
IGBT, 78 A, 2.35 V, 370 W, 600 V, TO-220AB, 3 Pins
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ManufacturerINFINEON
Manufacturer Part NoIRGB30B60KPBF
Order Code8659591
Also Known AsSP001546084
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRGB30B60KPBF
Order Code8659591
Also Known AsSP001546084
Technical Datasheet
Continuous Collector Current78A
Collector Emitter Saturation Voltage2.35V
Power Dissipation370W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220AB
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The IRGB30B60KPBF is an Insulated Gate Bipolar Transistor features low VCE (on) non-punch through IGBT technology and rugged transient performance.
- Square RBSOA
- Positive VCE (on) temperature coefficient
- Low EMI
- Excellent current sharing in parallel operation
- 10µs Short-circuit capability
Applications
Consumer Electronics, Power Management
Technical Specifications
Continuous Collector Current
78A
Power Dissipation
370W
Transistor Case Style
TO-220AB
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
2.35V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002